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Date: 22-06-13

MOSFET feature active clamp structure to protect from overvoltage in relays

Toshiba Corporation has launched a MOSFET, "SSM3K337R", for relay drivers. The new device uses an active clamp structure that prevents overvoltage when the inductive load of relay devices is switched off. Sample is available and mass production is scheduled to start in September.

Demand for relay drivers is growing for automobile, since the number of electric components equipped by automobile is increasing.
The "SSM3K337R" reduces ON-resistance by half and improves allowable power dissipation to approximately 1.6 times that of equivalent products.

Key Features:
Active clamp structure reduces stress by inductive load of relay devices.
ON-resistance is reduced by half.
Allowable power dissipation is improved to approximately 1.6 times, with SOT-23F package.
Main SpecificationsPackage Part Number VDSS
(V) VGSS
(V) ID(DC)
(A) RDS(ON) typ. (mΩ) Ciss
(pF) Qg
@2A
(nC)
VGS=4V VGS=4.5V VGS=10V
SOT-23F
2.9 × 2.8mm SSM3K337R 38 ±20 2 161 155 135 120 3.6

More info at
http://www.semicon.toshiba.co.jp/eng/product/new_products/transistor/1323380_37649.html

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