Freescale Semiconductor has introduced GaAs based enhancement-mode pHEMT low noise amplifier (LNA) designed for wireless systems operating between 700 and 1400 MHz in applications such as small cell and macrocell transceivers, as well as a range of applications requiring extremely low noise figures, high linearity, and high RF output power.
The noise figure of the new MML09231H is 0.36 dB at 900 MHz, making it a top-performing LNA in its frequency range, while maintaining one of the lowest noise figures of any small signal device in the industry, claims Freescale. This performance level is suggested as ideal for receiver designers, because it can boost product sensitivity to very low-level signals. In addition, the MML09231H has an output third order intercept point (OIP3) of 37.4 dBm at 900 MHz to provide high linearity for wireless systems.
The new Freescale LNA can tolerate a maximum input signal of +20 dBm, has an RF output peak power of +24.5 dBm (280 mW), high reverse isolation of -21 dB, small-signal gain of 17.2 dB (externally adjustable), and current consumption of 55 mA from a single 5 Vdc supply. Its features include an integrated power-down pin, active bias control for maintaining constant current, unconditional stability over temperature, and low external component count.
Availability: Now in production