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Date: 10-04-13

GaAs RF power amplifiers from Triquint Semiconductor in flange package

TriQuint Semiconductor has released three new gallium arsenide (GaAs) RF power amplifiers in a new package that serve on either side of a PCB board. The applications suitable for this device includes point-to-point microwave radio, radar, VSAT and related applications both in commercial and defense fields.

TriQuint says its new amplifiers feature low-loss, ground-signal-ground (GSG) RF transitions designed to interface with a coplanar waveguide multilayer PC circuit board for superior grounding.

Technical Details:
TGA2501-GSG 3.2W (35dBm), 6-18 GHz RF power amplifier with 26dB small-signal gain, 19dB large-signal gain, 23% efficiency, 8V/1.2A DC bias, integrated DC blocking capacitors, 14-pin 11.38 x 17.32mm flange package.
TGA2536-FL 5.5W (37.4dBm), 13.5-16 GHz RF power amplifier with 25dB small-signal gain, 19dB large-signal gain, 20% efficiency, 8V/2.6A DC bias, integrated DC blocking capacitors, 14-pin 11.38 x 17.32mm flange package.
TGA2517-GSG 14W (41.6dBm), 7.5-11.5 GHz RF power amplifier with 30dB small-signal gain, 22dB large-signal gain, 25% efficiency, 12V/3A DC bias, integrated DC blocking capacitors, 14-pin 11.38 x 17.32mm flange package. ITAR controlled; contact TriQuint for license requirements.

Samples and evaluation fixtures are available for all three of the newly released amplifiers.

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