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Date: 03-03-13

Trench power MOSFETs from Toshiba for automotive power electronics

Toshiba has launched a low-ON-resistance, low-leakage power MOSFET using the latest trench MOS process as an addition to the MOSFET lineup for automotive (power electronics) applications. The new product, "TK100S04N1L", achieves low ON-resistance with a combination of the latest 8th generation trench MOS process "U-MOS VIII-H series" chip and the "DPAK+" package that utilizes Cu (copper) connectors. The product is primarily suited for automotive applications, especially for those demanding high-speed switching, such as motor drives and switching regulators. Samples are available now with mass production scheduled to start in March 2013.

Key Features
Low ON-resistance: RDS(ON) = 1.9 milli ohms(typ.) (VGS=10V)
Low leakage current: IDSS=10µA(max) (VDS=rated voltage)
"DPAK+" package that realizes low-ON-resistance by utilizing Cu connectors.
Tch = 175°C guaranteed

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