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New Products

  Date: 16/01/2013

Low on-resistance automotive power MOSFET from Toshiba

Toshiba Corporation has launched a low ON-resistance automotive power MOSFET devices in TO-220SIS package for use in automotive electronics systems. The new product, TK80A04K3L features low leakage current and operate up to a temperature of 175C. This MOSFET can also be used in motor drives and switching regulators. These MOSFETS can be used to drive brushless DC motor from an MCU.

Key Features
1. Low ON-resistance (VGS=10V) RDS(ON)=1.9 Milli Ohms(typ.)
2. Low leakage current IDSS=10A(max) (VDS=rated voltage)
3. Tch = 175C guaranteed
4. Lead-insertion type TO-220SIS package



 
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