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Date: 03-03-13

Low on-resistance automotive power MOSFET from Toshiba

Toshiba Corporation has launched a low ON-resistance automotive power MOSFET devices in TO-220SIS package for use in automotive electronics systems. The new product, “TK80A04K3L” features low leakage current and operate up to a temperature of 175°C. This MOSFET can also be used in motor drives and switching regulators. These MOSFETS can be used to drive brushless DC motor from an MCU.

Key Features
1. Low ON-resistance (VGS=10V) RDS(ON)=1.9 Milli Ohms(typ.)
2. Low leakage current IDSS=10µA(max) (VDS=rated voltage)
3. Tch = 175°C guaranteed
4. Lead-insertion type TO-220SIS package

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