Electronics Engineering Herald                 
Home | News | New Products | India Specific | Design Guide | Sourcing database | Student Section | About us | Contact us | What's New
Processor / MCU / DSP
Memory
Analog
Logic and Interface
PLD / FPGA
Power-supply and Industrial ICs
Automotive ICs
Cellphone ICs
Consumer ICs
Computer ICs
Communication ICs (Data & Analog)
RF / Microwave
Subsystems / Boards
Reference Design
Software / Development kits
Test and Measurement
Discrete
Opto
Passives
Interconnect
Sensors
Batteries
Others

New Products

  Date: 26/10/2012

FRAM from Fujitsu: 2.7V to 5.5 volts Vcc, 1012 times read/write, and 256Kb storage

Fujitsu Semiconductor America has introduced a new Ferroelectric Random Access Memory (FRAM) device that operates from 2.7V to 5.5V. The MB85RC256V is the latest addition to the growing family of Fujitsu V Series FRAM ICs, which provide memory capacities of 4Kbit, 16Kbit, 64Kbit and 256Kbit.

The new MB85RC256V features memory capacity of 256Kb with configurations of 32k x 8 bits, 1012 times read/write cycle capability, and 10 years of data retention at industrial temperature ranges. The IC supports a 2-wire serial bus transmission protocol (I2C) with frequencies up to 1MHz (when operating between 4.5V and 5.5V) and frequencies of 400kHz (when operating between 2.7V and 4.5V).

FRAM is suggested for range of applications such as metering, industrial control, medical and healthcare electronics, and financial point-of-sale systems.

Availability: The new FRAM is available now in two varieties of SOP-8 packages (3.9mm x 5.05mm and 5.30mm x 5.24mm) to support different layout design requirements. These two package options are pin-compatible with other common memories available today, making it easy to replace existing sockets.



 
ADVT
Home | News | New Products | India Specific | Design Guide | Sourcing database | Student Section | About us | Contact us | What's New
©2010 Electronics Engineering Herald