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Date: 20-01-12

1200V SiC cascode power MOSFET performs far superior than others switches, claims AoS

Alpha and Omega Semiconductor Limited (AOS) and SemiSouth Laboratories jointly demonstrated UniSiC, a 1200V, 90milli ohms MOSFET in a TO262 package.

The UniSiC MOSFET is praised for its low Rdson and gate charge Qg, an excellent body diode with virtually no stored charge and a low diode forward voltage drop. This device can replace conventional MOSFET or IGBT, with standard gate drives but can be switched over a wide speed range - as fast as a Superjunction MOSFET, or as slow as an IGBT. The device is claimed far superior compared to existing IGBTs, Silicon power MOSFETs or even the best competitive SiC 1200V MOSFET.

Key data is summarized in table below with figure, it shows the die sizes of a 1200V IGBT with co-packaged diode, the 1200V competitor SiC MOSFET and the AOS UniSiC stack-cascode device. This device boasts small-size and power density.

The UniSiC device is formed by stacking a specially designed low voltage Silicon MOSFET atop a normally-on SiC JFET provided by SemiSouth.

"Using the superb characteristics of SiC JFETs for high voltage applications, and solving the switching problems that have plagued cascode devices in the past, AOS is in a position to offer the power electronics community a dream switch," said Dr. Anup Bhalla, Vice President of High-Voltage Discretes at AOS. "The devices can be used like conventional discrete IGBTs and FETs using the same gate drives, allowing the user to realize huge efficiency gains without too much re-engineering."

"We are very pleased with the introduction of this new high voltage technology, which, in partnership with SemiSouth laboratories, allows AOS to bring a truly revolutionary device to the world of power conversion," commented Dr. Mike Chang, President and CEO of AOS. "Products like these will set AOS apart as the high voltage supplier of choice, facilitating our twin goals of product diversification and rapid growth."

"SemiSouth is excited to see the performance achieved by AOS using our SiC power JFET die. First released in 2008, we have seen our JFET products gain rapid adoption in the market, and this first-ever stack-cascode demonstration from AOS really takes the performance and ease of use to the next level. We are pleased to have this relationship with AOS as a valued customer." said Dr. Jeff Casady, President and CTO of SemiSouth Laboratories.

 

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