N-channel 0.357mm thin power MOSFET from Vishay

Vishay has unveiled the 20-V MICRO FOOT Si8800EDB, a n-channel chipscale power MOSFET with a sub-1-mm2 outline. The 20-V MICRO FOOT Si8800EDB is packed in an ultra-small 0.8-mm by 0.8-mm outline with a height of 0.357 mm.

Vishay says that with its ultra-small outline and height, the Si8800EDB is 36 % smaller and 11 % thinner than the next smallest n-channel device in a chipscale package, allowing for the creation of more compact end products with increased functionality.

The MOSFET offers maximum on-resistance values of 80 milli Ohms at 4.5 V, 90 milli Ohms at 2.5 V, 105 milli Ohms at 1.8 V, and 150 milli Ohms at 1.5 V. This device is suitable for new devices that include load switches and small signal switching in portable devices such as cell phones, PDAs, digital cameras, MP3 players, and smart phones. The Si8800EDB features typical ESD protection of 1500 V, is compliant to RoHS Directive 2002/95/EC, and is halogen-free according to the IEC 61249-2-21 Definition.

Availability: Now.

For more information visit: http://www.vishay.com.