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Date: 24th Dec 09
Low on-resistance, 12-V p-channel MOSFET
targeting handheld electronic apps
Vishay has introduced the SiB455EDK, a new 12-V p-channel
TrenchFET Gen III power MOSFET that offers low on-resistance
from 27 mOhm at 4.5 V to 130 mOhm at 1.5 V, which is suitable
for load, PA, and battery switches in handheld devices such
as cell phones, smart phones, PDAs, and MP3 players.
Vishay says, the SiB455EDK uses self-aligning process techniques
to pack one billion transistor cells into each square inch
of silicon. This leading-edge technology allows a superfine,
sub-micron pitch process that cuts on-resistance for a p-channel
MOSFET in half.
The key features of this device are,
Halogen-free free in accordance with IEC 61249-2-21 and
compliant to RoHS Directive 2002/95/EC
1500 V (typ) of ESD performance
100 % Rg tested
The new device is also the only 12-V MOSFET with both a
gate-source voltage of 10 V and an on-resistance rating
at 1.5 V. This allows it to be used in applications that
encounter higher gate-drive voltage variation due to surges,
spikes, noise, or overvoltages, while providing safer designs
for smaller input voltages.
Package: Thermally enhanced PowerPAK SC-75 (1.6-mm x 1.6-mm)
package
Availability: Now in samples, production quantities will
be available in Q1 2010
For more details visit www.vishay.com
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