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Date: 28th Dec 06
Samsung
develops 1GB low power DDR memory for cellphones
Samsung has developed a monolithic 1GB DRAM as a replacement
over stacked package for mobile handheld products. This
new chip has temperature-sensing feature and is self refreshing.
By sensing the temperature, it optimizes the capacitor refresh
cycle to save power either in standby mode or full power
mode.
This device is 20% thinner than stacked memory chip. Samsung
also has plans to bring flash memory combined multi-chip
package.
However this device will be available only in 2Q07.
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