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Date: 21st Nov 09
0.55mm thick MOSFETs from Fairchild
Semiconductor
Fairchild Semiconductor's MicroFET thin package integrate
P-Channel PowerTrench MOSFET and Schottky diode.
The FDFMA2P859T provide 30 percent height reduction over
the 0.8mm MicroFET package. With a 0.55mm package height,
this device is suitable for low profile designs, such as
those common in the latest portable and wearable cell phones,
media players and medical devices.
The customers design requirements for the FDFMA2P859T was
for the device to provide exceptional thermal performance
for its physical size, and to ensure a low reverse leakage
current (lr) of 1µA at Vr=10V, for the Schottky diode.
These attributes are important in performance and efficiency
in linear mode battery charging and power-multiplexing applications.
Price: Each $ 0.39 for 1k pieces
Availability: Now in samples
For more details visit www.fairchildsemi.com
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