NXP Semiconductor brings down the on-resistance of MOSFET below 1 milli ohm

By introducing a new MOSFET with on-resistance of 0.9 milli Ohm, NXP Semiconductors has achieved a new milestone. The newly released MOSFET PSMN1R2-25YL operates at a voltage of 25 Volts.

PSMN1R2-25YL, has a typical RDSon of 0.9 mOhm for a 25V part in Power-S08 (LFPAK), and 1.0 mOhm (typical) for a 30V part.

The targeted applications for this MOSFET are, Power OR-ring, motor control and high efficiency synchronous buck-regulators.

"The technology for producing MOSFETs is an ongoing race to improve performance," says John David Hughes, Senior International Product Marketing Manager of NXP. "We are using innovative techniques in the new Trench 6 process which further reduce the on-resistance. There are many advantages of the new Trench technology to our customers such as improved switching efficiency from the silicon and superior electrical and thermal resistance from the package. NXP's Power-S08 (LFPAK) package is compatible with all widely accepted Power SO-8 PCB footprints."

Each priced at $0.80 (for 1K pieces) PSMN1R2-25YL is immediately available.

For more details visit www.nxp.com/infocus/topics/lowest_rds_mosfet/index.html