Memory device packs 4Gb NAND flash and 2Gb DDR DRAM

Micron has introduced a Multi Chip Packaged (MCP) memory device with 4Gb SLC NAND flash memory and 2Gb low power DDR DRAM. MCPs enable smart phones to store and process the rich high bandwidth media content received through 3G broadband interfaces in a lesser space. Also the media data in personal media players and MIDs applications can handle large quantity of multimedia content within small footprints. These die stacked memory modules which can be physically fixed to the PCB just like any monolithic chip offer size advantage, and layout simplicity.

"With Micron's 34nm 4Gb NAND and 50nm 2Gb LPDDR monolithic die used in this package, we are providing customers with the most advanced solution available in NAND-based MCPs," said Eric Spanneut, director of mobile memory marketing. "By combining the industry's leading NAND and DRAM processes within our new generation of MCPs, we are able to easily accommodate the shift to high-density NAND devices as the industry progresses toward multi-function mobile devices."

Availability: Currently sampling and expects to be in volume production in early 2010.

For more details visit www.micron.com

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