New 54nm 1Gb DDR3 from Hynix Semiconductor consumes 30% less power

Hynix Semiconductor has introduced low power consuming new 1Gb DDR3 using 54nm process technology and is offered in x4 (H5TQ1G43TFR) and x8 (H5TQ1G83TFR) organizations.

The 1Gb DDR3 operates at 1.5V power supply and reduces power consumption by 30% over the existing one. Production volumes of this chip will be available in this month of October 2009.

DRAM market looks to be getting back to good growth levels. Both Samsung and Hynix are gearing up to take on the market opportunity by boosting production and innovation effort. The U.S. DRAM maker Micron is also a favored vendor in DDR3 area followed by many Taiwanese vendors.

According to the iSuppli, the portion of the 1Gb DDR3 is currently estimated to be 87%. The iSuppli estimates that high densities will become the mainstream when it is expected to account for more than 50% in 2011.

Another market researcher International Data Corporation (IDC) reported, the worldwide DDR3 DRAM market will account for 29 percent of the total DRAM market in 2009 and 75 percent in 2011. In addition, IDC estimates that 2Gb-or-higher DDR3 DRAM will make up three percent of the total DRAM market in 2009 and 33 percent in 2011 (units in bits).

DDR3 is now ready to hit PC and server market in a big way followed by its entry into various other embedded applications including FPGAs and SoCs.

Editorial Product Rating: Average Plus