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Date: 10th Sept 09
Vishay's p-channel TrenchFET Gen III power MOSFET for Electronic/Portable
apps
Vishay has introduced the SiB457EDK, a new 20-V p-channel
power MOSFET is built on TrenchFET Gen III p-channel technology
that uses self-aligning process techniques to pack one billion
transistor cells into each square inch of silicon. The suggested
applications of this technology are adaptor and load switches
in notebook computers and industrial/general systems, Load
switches in charging circuits and portable devices such
as cell phones, smart phones, PDAs, and MP3 players.
Key features are.
Halogen-free according to IEC 61249-2-21 definition
New Thermally Enhanced PowerPAK
SC-75 Package
Small 1.6-mm by 1.6-mm footprint area
Low on-resistance
100 % Rg tested
Typical ESD performance: 2500 V
Built in ESD protection with zener diode
Compliant to RoHS directive 2002/95/EC
And the key specifications are,
| Device |
Package |
VDS (V) |
VGS (V) |
RDS(on) (mO) at VGS = |
| 10 V |
4.5 V |
2.5 V |
1.8 V |
1.5 V |
| SiB457EDK |
PowerPAK SC-75 |
- 20 |
8 |
|
35 |
49 |
72 |
130 |
| SiA921EDJ |
PowerPAK SC-70 |
- 20 |
12 |
|
59 |
98 |
|
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| Si7615DN |
PowerPAK 1212-8 |
- 20 |
12 |
3.9 |
5.5 |
9.8 |
|
|
| Si7137DP |
PowerPAK SO-8 |
- 20 |
12 |
1.9 |
2.5 |
3.9 |
|
|
| Si7145DP |
PowerPAK SO-8 |
- 30 |
20 |
2.6 |
3.75 |
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Package: compact PowerPAK SC-75 package
Availability: Now
For more details visit www.vishay.com
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