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Date: 26th May 2010
18W and 30W GaAs FETs from Toshiba operate
in the 12.7 to 13.2 GHz range
Toshiba has announced the expansion of their Ku-Band gallium
arsenide field effect transistor (GaAs FETs) lineup with
two higher output power devices rated for 18 and 30 watts
(W).
The new GaAs FETs, TIM1213-18L and TIM1213-30L, operate
in the 12.7 to 13.2 GHz range, and are targeted for use
in microwave radios for microwave links and satellite communications.
Other current Toshiba GaAs FETs in this frequency range
feature 2W, 4W, 8W, 10W and 15W power output ratings.
The TIM 1213-18L has output power at 1dB gain compression
point (P1dB) of 42.5 dBm (typ.), power gain at 1dB gain
compression point (G1dB) of 6.0dB (typ.) and power efficiency
of 28 percent. The TIM 1213 - 30 L features P1dB of 45.0
dBm (typ.), G1dB of 5.5dB (typ.) and power added efficiency
of 23 percent.
"Continuing our long tradition of developing higher
power amplifiers as technology advances, Toshiba is expanding
our Ku-Band product family with these new devices to enable
our customers to design more powerful and linear microwave
radios with fewer components," said Homayoun Ghani,
business development manager, Microwave, Logic, and Small
Signal Devices, in TAEC's Discrete Business Unit.
Technical Specifications:
|
Product Characteristics |
TIM1213-18L |
TIM1213-30L |
| Frequency |
12.7-13.2GHz |
12.7-13.2GHz |
| Band |
Ku-Band |
Ku-Band |
| Output Power, P1dB (typ.) |
42.5dBm |
45.0dBm |
| Power Gain, G1dB (typ.) |
6.0dB |
5.5dB |
| Power Added Efficiency |
28% |
23% |
Availability: Now
For more information visit: www.chips.toshiba.com
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