2nd gen SiC schottky diodes from Infineon in TO-220 FullPAK Package

Infineon has declared the availability of its 2nd generation SiC (Silicon Carbide) Schottky diodes in the TO-220 FullPAK package. Infineon says its new TO220 FullPak portfolio combines the high electrical performance standards of the ThinQ! SiC Schottky diodes with the advantages of a fully isolated package.

Infineon applies patented diffusion soldering technique for these devices to show a similar junction-to-heatsink thermal resistance as the standard non-isolated TO-220 devices. These devices are offered in the current rating of 2A to 6A.

Silicon Carbide (SiC) has physical properties that can outperform Silicon power devices. Key features are a benchmark switching behavior, no reverse recovery, low temperature influence on the switching behavior and a standard operating temperature of -55°C to 175°C. Their application areas are active Power Factor Correction (PFC) in Switched Mode Power Supplies (SMPS) and other AC/DC and DC/DC power conversion applications such as solar inverters and motor drives.

Availability: Now