12-V power MOSFET with on-resistance 1.2 milli ohms

The new 12 volts MOSFET from Vishay offer a low on-resistance of 1.2 milli ohms at 10-V gate drive and 1.7 milli ohms at a 4.5-V gate drive. The on-resistance times gate charge, a key figure of merit (FOM) for these MOSFETs in dc-to-dc converter applications, is 85 nC at 4.5 V.

The SiR494DP is advised for use as low-side MOSFET in synchronous buck converters with low input voltages (5 V to 3.3 V), in OR-ing applications with low output voltages (5 V, 3.3 V, and below), and in a wide range of systems using point-of-load (POL) power conversion with input voltages of 5 V and 3.3 V, where its low conduction and switching losses will enable more efficient use of power.

Vishay says, for applications with low output voltages, a 12-V drain-to-source rating may be perfectly adequate, but until now designers were forced to use 20-V devices, especially if they were looking for the combination of the lowest available on-resistance and a 20-V gate-to-source drive. The SiR494DP is the first power MOSFET to combine all three: VDS = 12 V, VGS = ± 20 V, and on-resistance of just 1.2 milli ohms at a 10-V gate drive.

This immediately available power MOSFET is offered in the PowerPAK SO-8 package. The device is lead (Pb)-free, halogen-free according to IEC 61249-2-21, compliant with RoHS Directive 2002/96/EC, and is 100 % Rg- and UIS-tested.

For further details visit: www.vishay.com/mosfets/trenchfet-gen-iii/

Lead times for large volume purchase is 10 to 12 weeks