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Date: 24th Feb 2010
High frequency GaN power stage devices
from IR for multiphase and POL apps
Gallium Nitride (GaN)-based iP2010 and iP2011 integrated
power stage devices from International Rectifier targets
multiphase and point-of-load (POL) applications such as
servers, routers, switches and general purpose POL DC-DC
converters.
The iP2010 and iP2011 devices integrate a high, fast PowIRtune
driver IC matched to a multi-switch monolithic GaN-based
power device. These devices are mounted in a flip chip package
platform to deliver high efficiency and more than double
the switching frequency of silicon-based integrated power
stage devices.
The iP2010 device features an operating input voltage range
of 7V to 13.2V and output voltage range of 0.6V to 5.5V
with an output current up to 30A. The device operates up
to 3MHz. Operating up to 5MHz, the pin-compatible iP2011
features the same input and output voltage range, but is
optimized for an output current up to 20A.
"The introduction of this family of GaN-based power
devices for DC-DC applications heralds a new era in high
frequency, high density, highly efficient power conversion
solutions, and reaffirms IR's position at the forefront
of innovative power management design," said Goran
Stojcic, executive director for IR's POL Products, Enterprise
Power Business Unit. John Lambert, POL product manager,
added: "With a switching capability up to 5MHz, the
iP201x family enables designers to dramatically reduce the
value and size of output capacitors and inductors where
space is at premium. The devices can also be configured
to operate at a lower switching frequency for applications
that require the highest possible efficiencies."
Availability: Samples are available to qualified customers
Price:
iP2010TRPbF: Each $9.00 for 2.5k pieces
iP2011TRPbF: Each $6.00 for 2.5k pieces
For more details visit www.irf.com
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