Power MOSFETs are critical components in high voltage switching in AC/DC and DC/DC converters and DC/AC inverters. Below is the brief selection guide to select Power MOSFETs for your high voltage power supply design applications.
Key Specifications of MOSFETs:
Breakdown Voltage(BVDSS): Is the voltage at which the reverse-biased body-drift diode breaks down and significant current starts to flow between the source and the drain by the avalanche multiplication process, while the gate and source are shorted together. It's usually measured at 250uA drain current.
On-Resistance(RDS): The on-resistance of a power MOSFET is made up of several components such as Source diffusion resistance, Channel resistance, Accumulation resistance, Drift region resistance, Substrate resistance, etc.,
Transconductance(gfs): Is a measure of the sensitivity of drain current to the changes in gate-source bias. It's quoted for Vgs and is influenced by gate width, which increases in proportion to the active area as cell density increases.
Threshold Voltage(Vth): The maximum gate electrode bias required to strongly invert the surface under the poly and form a conducting channel between the source and the drain regions. It's usually measured at a drain-source current of 250uA.
Diode Forward Voltage(VF): Is the quaranteed maximum forward drop of the body-drain diode at a specified source current.
Power Dissipation(Pd): The maximum allowable power dissipation that will raise the die temperature to the maximum allowable when the case temperature is held at 25 Deg Cel.
Continuous Drain Current(ID): The rating of the maximum continuous DC current with the die at its maximum rated junction temperature and the case at 25 Deg Cel.
Parts selection table from key vendors of High voltage MOSFETs (sorted based on VDSS & On-Resistance):
|Sl No||Manufacturer Name||Manufacturer Part Number||Breakdown Voltage(VDSS) - Volts||On-Resistance (RDS) @ VGS=10V|
|1||IXYS Corporation||IXTF1N400||4000||60 Ohm|
|2||IXYS Corporation||IXTK5N250||2500||8.8 Ohm|
|3||IXYS Corporation||IXTX20N150||1500||1 Ohm|
|7||IXYS Corporation||IXTA2R4N120P||1200||7.5 Ohm|
|8||RoHM Semiconductor||SCH2090KE*||1200||0.09 Ohm|
|9||IXYS Corporation||IXTA08N120P||1200||25 Ohm|
|10||Microsemi Corporation||APT31M100B2||1000||0.38 Ohm|
|12||Fairchild Semiconductor||FQA8N100C||1000||1.45 Ohm|
|13||Vishay||IRFPG50, SiHFPG50||1000||2 Ohm|
|14||Fairchild Semiconductor||FQD2N100TM||1000||9 Ohm|
|15||IXYS Corporation||IXTY01N100||1000||80 Ohm|
|17||Infineon Technologies||IPW90R120C3||900||120 mOhm|
|18||Vishay||IRFBF30, SiHFBF30||900||3.7 Ohm|
|19||Fairchild Semiconductor||FQAF11N90C||900||1.1 Ohm|
|20||Infineon Technologies||IPI90R800C3||900||800 mOhm|
|21||Microsemi Corporation||APT31N80JC3||800||0.145 Ohm|
|22||Fairchild Semiconductor||FQA13N80_F109||800||0.75 Ohm|
|23||Infineon Technologies||SPB17N80C3||800||290 mOhm|
|24||Vishay||IRFPE40, SiHFPE40||800||2 Ohm|
|25||Infineon Technologies||SPA02N80C3||800||2,700 mOhm|
|26||Microsemi Corporation||APT43M60L||600||0.15 Ohm|
|27||IXYS Corporation||IXTY5N50P||500||1.4 Ohm|
|28||International Rectifier||IRFB812PBF||500||2200 mOhm|
|29||International Rectifier||IRF7799L2TR1PBF||250||38 mOhm|
|Part Number||Drain Current (ID max) @ 25C - Amps||Power Dissipation - Watts||VGS min - Volts||VGS max - Volts||Rth||Total Gate Charge(Qg typ)|
|IXTF1N400||1||160||0.78 K/W||78 nC|
|IXTK5N250||5||960||0.13 K/W||200 nC|
|IXTX20N150||20||1250||0.1 K/W||215 nC|
|IXTA2R4N120P||2.4||125||1 K/W||37 nC|
|IXTA08N120P||0.8||50||2.5 K/W||14 nC|
|APT31M100B2||32||1040||30||0.12 K/W||260 nC|
|FQA8N100C||8||225||3||0.56 C/W||53 nC|
|IRFPG50, SiHFPG50||6.1||190||2||20||190 nC|
|FQD2N100TM||1.6||50||3||2.5 C/W||12 nC|
|IXTY01N100||0.1||25||3 K/W||8 nC|
|IPW90R120C3||36||417||2.5||3.5||0.3 K/W||260.0 nC|
|IRFBF30, SiHFBF30||3.6||125||2||20||78 nC|
|FQAF11N90C||7||120||3||1.04 C/W||60 nC|
|IPI90R800C3||6.9||104||2.5||3.5||1.2 K/W||42.0 nC|
|APT31N80JC3||31||833||20||0.37 C/W||180 nC|
|FQA13N80_F109||12.6||300||3||0.42 C/W||68 nC|
|SPB17N80C3||17||227||2.1||3.9||0.55 K/W||91.0 nC|
|IRFPE40, SiHFPE40||5.4||150||2||20||130 nC|
|SPA02N80C3||2||30.5||2.1||3.9||4.1 K/W||9.0 nC|
|APT43M60L||45||780||30||0.16 C/W||215 nC|
|IXTY5N50P||5||89||1.4 K/W||12.6 nC|
|IRFB812PBF||3.6||78||20||1.6 C/W||13.3 nC|
|IRF7799L2TR1PBF||35||125||30||1.2 C/W||110 nC|
|Part Number||Package||Approximate Cost in 2012 (US$)|
|IXTY01N100||TO-252AA (D PAK)|
|IXTY5N50P||TO-252AA (D PAK)|
|IRF7799L2TR1PBF||Surface Mount Can-DirectFET||2.389|
STMicro's SuperMESH, SuperMESH-3, SuperMESH-5 technology components are available with breakdown voltages up to 1500V, drain current up to 40A, and on-resistance as low as 0.18 ohms.
STMicro's MDmesh-V power MOSFET family (STW88N65M5) features the industry's lowest on-resistance for 650V devices at 0.029 Ohms. TO-247 packaged component costs around 20$.
Vishay recently released the company's E series of MOSFETS that features 30% lower on-resistance than other 600-650V devices. The D-Series MOSFETs from Vishay 400 V, 500V, and 600 V n-channel devices combine low specific on-resistance with ultra-low gate charge and currents from 3 A to 36 A in a wide range of packages.
Fairchild has introduced a new 600V super-junction MOSFETs -SupreMOS for power supplies, lighting, display and industrial applications with low on-resistance and low figure of merit compared to its 600V SuperFET MOSFETs.
Toshiba's new devices in the p-MOS VII series include seven 500V and six 600V MOSFETs, targeted for use in switched-mode power supplies, such as AC adapters in notebook and desktop computers, flat panel displays, and ballasts used in lighting. Additional products are planned that will extend the product family from 400V to 650V and provide a wide selection of electrical characteristics, including drain current, RDS(ON) and gate capacitance of MOSFET.
ROHM announced the development of R5050DNZ0C9 (500V/50A, 34mO) high-voltage power MOSFET featuring the industry's lowest ON resistance designed for power conditioners used in photovoltaic power generation.
Silica's (an Avnet company) CoolMOS C6/E6 high voltage power MOSFETs are designed for better energy efficiency demands which are more suitable for PFC & PWM stages in servers, PC silverbox, lighting and adapter applications.
IXYS has released a new 900V rugged and fast polar series power MOSFETs with drain current ratings from 10.5 Amperes to 56 Amperes, and the operating voltage ranges from 500V to 1200V. These new 900V MOSFET devices combine IXYS' Polar Technology platform and HiPerFET process to provide improved power efficiency and reliability for high-voltage conversion systems that require bus voltage operation of up to 700V.
Infineon Technologies has launched new 650V superjunction MOSFET devices called CoolMOS CFDA designed for resonant power conversion topologies such as battery charging, DC/DC converters and HID (High Intensity Discharge) Lighting, also in hybrid and electric vehicles. Superjunction MOSFETs advantages are: a better light load efficiency, reduced gate charge, lower switching losses, easy implementation and higher reliability.
Alpha and Omega Semiconductor Limited (AOS) and SemiSouth Laboratories jointly demonstrated UniSiC, a 1200V, 90milli ohms MOSFET in a TO262 package.
The UniSiC MOSFET is praised for its low Rdson and gate charge Qg, an excellent body diode with virtually no stored charge and a low diode forward voltage drop. This device can replace conventional MOSFET or IGBT, with standard gate drives but can be switched over a wide speed range - as fast as a Superjunction MOSFET, or as slow as an IGBT. The device is claimed far superior compared to existing IGBTs, Silicon power MOSFETs or even the best competitive SiC 1200V MOSFET.
Click on the part number below to download data-sheet:
Note: There are chances of errors in specifications, please cross check with vendor's data sheets.