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Power Electronics
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Inverter and converter design:
High Voltage Power MOSFETs
Introduction:
Power MOSFETs are critical components in high voltage
switching in AC/DC and DC/DC converters and DC/AC inverters.
Below is the brief selection guide to select Power MOSFETs
for your high voltage power supply design applications.
Key Specifications of MOSFETs:
Breakdown Voltage(BVDSS): Is the voltage at which
the reverse-biased body-drift diode breaks down and significant
current starts to flow between the source and the drain
by the avalanche multiplication process, while the gate
and source are shorted together. It's usually measured at
250uA drain current.
On-Resistance(RDS): The on-resistance of a power
MOSFET is made up of several components such as Source diffusion
resistance, Channel resistance, Accumulation resistance,
Drift region resistance, Substrate resistance, etc.,
Transconductance(gfs): Is a measure of the sensitivity
of drain current to the changes in gate-source bias. It's
quoted for Vgs and is influenced by gate width, which increases
in proportion to the active area as cell density increases.
Threshold Voltage(Vth): The maximum gate electrode
bias required to strongly invert the surface under the poly
and form a conducting channel between the source and the
drain regions. It's usually measured at a drain-source current
of 250uA.
Diode Forward Voltage(VF): Is the quaranteed maximum
forward drop of the body-drain diode at a specified source
current.
Power Dissipation(Pd): The maximum allowable power
dissipation that will raise the die temperature to the maximum
allowable when the case temperature is held at 25 Deg Cel.
Continuous Drain Current(ID): The rating of the maximum
continuous DC current with the die at its maximum rated
junction temperature and the case at 25 Deg Cel.
Parts selection table from key vendors of High voltage
MOSFETs (sorted based on VDSS & On-Resistance):
Sl No |
Manufacturer Name |
Manufacturer Part Number |
Breakdown Voltage(VDSS) - Volts |
On-Resistance (RDS) @ VGS=10V |
1 |
IXYS Corporation |
IXTF1N400 |
4000 |
60 Ohm |
2 |
IXYS Corporation |
IXTK5N250 |
2500 |
8.8 Ohm |
3 |
IXYS Corporation |
IXTX20N150 |
1500 |
1 Ohm |
4 |
STMicroelectronics |
STW9N150 |
1500 |
2.5 Ohm |
5 |
STMicroelectronics |
STP4N150 |
1500 |
5 Ohm |
6 |
STMicroelectronics |
STFW6N120K3 |
1200 |
2.4 Ohm |
7 |
IXYS Corporation |
IXTA2R4N120P |
1200 |
7.5 Ohm |
8 |
RoHM Semiconductor |
SCH2090KE* |
1200 |
0.09 Ohm |
9 |
IXYS Corporation |
IXTA08N120P |
1200 |
25 Ohm |
10 |
Microsemi Corporation |
APT31M100B2 |
1000 |
0.38 Ohm |
11 |
STMicroelectronics |
STW13NK100Z |
1000 |
0.7 Ohm |
12 |
Fairchild Semiconductor |
FQA8N100C |
1000 |
1.45 Ohm |
13 |
Vishay |
IRFPG50, SiHFPG50 |
1000 |
2 Ohm |
14 |
Fairchild Semiconductor |
FQD2N100TM |
1000 |
9 Ohm |
15 |
IXYS Corporation |
IXTY01N100 |
1000 |
80 Ohm |
16 |
STMicroelectronics |
STW25N95K3 |
950 |
0.36 Ohm |
17 |
Infineon Technologies |
IPW90R120C3 |
900 |
120 mOhm |
18 |
Vishay |
IRFBF30, SiHFBF30 |
900 |
3.7 Ohm |
19 |
Fairchild Semiconductor |
FQAF11N90C |
900 |
1.1 Ohm |
20 |
Infineon Technologies |
IPI90R800C3 |
900 |
800 mOhm |
21 |
Microsemi Corporation |
APT31N80JC3 |
800 |
0.145 Ohm |
22 |
Fairchild Semiconductor |
FQA13N80_F109 |
800 |
0.75 Ohm |
23 |
Infineon Technologies |
SPB17N80C3 |
800 |
290 mOhm |
24 |
Vishay |
IRFPE40, SiHFPE40 |
800 |
2 Ohm |
25 |
Infineon Technologies |
SPA02N80C3 |
800 |
2,700 mOhm |
26 |
Microsemi Corporation |
APT43M60L |
600 |
0.15 Ohm |
27 |
IXYS Corporation |
IXTY5N50P |
500 |
1.4 Ohm |
28 |
International Rectifier |
IRFB812PBF |
500 |
2200 mOhm |
29 |
International Rectifier |
IRF7799L2TR1PBF |
250 |
38 mOhm |
Part Number |
Drain Current (ID max) @ 25C - Amps |
Power Dissipation - Watts |
VGS min - Volts |
VGS max - Volts |
Rth |
Total Gate Charge(Qg typ) |
IXTF1N400 |
1 |
160 |
|
|
0.78 K/W |
78 nC |
IXTK5N250 |
5 |
960 |
|
|
0.13 K/W |
200 nC |
IXTX20N150 |
20 |
1250 |
|
|
0.1 K/W |
215 nC |
STW9N150 |
8 |
320 |
|
|
|
89.3 nC |
STP4N150 |
4 |
160 |
|
|
|
35 nC |
STFW6N120K3 |
5 |
150 |
|
|
|
32 nC |
IXTA2R4N120P |
2.4 |
125 |
|
|
1 K/W |
37 nC |
SCH2090KE* |
26 |
125 |
|
|
|
|
IXTA08N120P |
0.8 |
50 |
|
|
2.5 K/W |
14 nC |
APT31M100B2 |
32 |
1040 |
|
30 |
0.12 K/W |
260 nC |
STW13NK100Z |
13.5 |
350 |
|
|
|
220 nC |
FQA8N100C |
8 |
225 |
3 |
|
0.56 C/W |
53 nC |
IRFPG50, SiHFPG50 |
6.1 |
190 |
2 |
20 |
|
190 nC |
FQD2N100TM |
1.6 |
50 |
3 |
|
2.5 C/W |
12 nC |
IXTY01N100 |
0.1 |
25 |
|
|
3 K/W |
8 nC |
STW25N95K3 |
22 |
400 |
|
|
|
105 nC |
IPW90R120C3 |
36 |
417 |
2.5 |
3.5 |
0.3 K/W |
260.0 nC |
IRFBF30, SiHFBF30 |
3.6 |
125 |
2 |
20 |
|
78 nC |
FQAF11N90C |
7 |
120 |
3 |
|
1.04 C/W |
60 nC |
IPI90R800C3 |
6.9 |
104 |
2.5 |
3.5 |
1.2 K/W |
42.0 nC |
APT31N80JC3 |
31 |
833 |
|
20 |
0.37 C/W |
180 nC |
FQA13N80_F109 |
12.6 |
300 |
3 |
|
0.42 C/W |
68 nC |
SPB17N80C3 |
17 |
227 |
2.1 |
3.9 |
0.55 K/W |
91.0 nC |
IRFPE40, SiHFPE40 |
5.4 |
150 |
2 |
20 |
|
130 nC |
SPA02N80C3 |
2 |
30.5 |
2.1 |
3.9 |
4.1 K/W |
9.0 nC |
APT43M60L |
45 |
780 |
|
30 |
0.16 C/W |
215 nC |
IXTY5N50P |
5 |
89 |
|
|
1.4 K/W |
12.6 nC |
IRFB812PBF |
3.6 |
78 |
|
20 |
1.6 C/W |
13.3 nC |
IRF7799L2TR1PBF |
35 |
125 |
|
30 |
1.2 C/W |
110 nC |
Part Number |
Package |
Approximate Cost in 2012 (US$) |
IXTF1N400 |
ISOPLUS i4-Pak |
|
IXTK5N250 |
TO-264 |
|
IXTX20N150 |
PLUS247 |
|
STW9N150 |
TO-247 |
5.711 |
STP4N150 |
TO-220 |
4.862 |
STFW6N120K3 |
TO-3PF |
5.059 |
IXTA2R4N120P |
TO-263 |
|
SCH2090KE* |
15.9x20.95(t=5.03) |
|
IXTA08N120P |
TO-263 |
|
APT31M100B2 |
T-MAX |
|
STW13NK100Z |
TO-247 |
|
FQA8N100C |
TO3P 3-LEAD |
3.45 |
IRFPG50, SiHFPG50 |
TO-247AC |
|
FQD2N100TM |
TO-252(DPAK) |
0.79 |
IXTY01N100 |
TO-252AA (D PAK) |
|
STW25N95K3 |
TO-247 |
12.335 |
IPW90R120C3 |
TO-247 |
|
IRFBF30, SiHFBF30 |
TO-220AB |
|
FQAF11N90C |
TO-247/TO-3P/TO-3PF |
3.17 |
IPI90R800C3 |
I2PAK (TO-262) |
|
APT31N80JC3 |
SOT-227 (ISOTOP) |
|
FQA13N80_F109 |
TO3P 3-LEAD |
3.45 |
SPB17N80C3 |
D2PAK (TO-263) |
|
IRFPE40, SiHFPE40 |
TO-247AC |
|
SPA02N80C3 |
TO-220 FullPAK |
|
APT43M60L |
TO-264 |
|
IXTY5N50P |
TO-252AA (D PAK) |
|
IRFB812PBF |
TO-220AB |
0.544 |
IRF7799L2TR1PBF |
Surface Mount Can-DirectFET |
2.389 |
Product Highlights:
STMicro's SuperMESH, SuperMESH-3, SuperMESH-5 technology
components are available with breakdown voltages up to
1500V, drain current up to 40A, and on-resistance as low
as 0.18 ohms.
STMicro's MDmesh-V power MOSFET family (STW88N65M5) features
the industry's lowest on-resistance for 650V devices at
0.029 Ohms. TO-247 packaged component costs around 20$.
Vishay recently released the company's E series of MOSFETS
that features 30% lower on-resistance than other 600-650V
devices. The D-Series MOSFETs from Vishay 400 V, 500V,
and 600 V n-channel devices combine low specific on-resistance
with ultra-low gate charge and currents from 3 A to 36
A in a wide range of packages.
Fairchild has introduced a new 600V super-junction MOSFETs
-SupreMOS for power supplies, lighting, display and industrial
applications with low on-resistance and low figure of
merit compared to its 600V SuperFET MOSFETs.
Toshiba's new devices in the p-MOS VII series include
seven 500V and six 600V MOSFETs, targeted for use in switched-mode
power supplies, such as AC adapters in notebook and desktop
computers, flat panel displays, and ballasts used in lighting.
Additional products are planned that will extend the product
family from 400V to 650V and provide a wide selection
of electrical characteristics, including drain current,
RDS(ON) and gate capacitance of MOSFET.
ROHM announced the development of R5050DNZ0C9 (500V/50A,
34mO) high-voltage power MOSFET featuring the industry's
lowest ON resistance designed for power conditioners used
in photovoltaic power generation.
Silica's (an Avnet company) CoolMOS C6/E6 high voltage
power MOSFETs are designed for better energy efficiency
demands which are more suitable for PFC & PWM stages
in servers, PC silverbox, lighting and adapter applications.
IXYS has released a new 900V rugged and fast polar series
power MOSFETs with drain current ratings from 10.5 Amperes
to 56 Amperes, and the operating voltage ranges from 500V
to 1200V. These new 900V MOSFET devices combine IXYS'
Polar Technology platform and HiPerFET process to provide
improved power efficiency and reliability for high-voltage
conversion systems that require bus voltage operation
of up to 700V.
Infineon Technologies has launched new 650V superjunction
MOSFET devices called CoolMOS CFDA designed for resonant
power conversion topologies such as battery charging,
DC/DC converters and HID (High Intensity Discharge) Lighting,
also in hybrid and electric vehicles. Superjunction MOSFETs
advantages are: a better light load efficiency, reduced
gate charge, lower switching losses, easy implementation
and higher reliability.
Alpha and Omega Semiconductor Limited (AOS) and SemiSouth
Laboratories jointly demonstrated UniSiC, a 1200V, 90milli
ohms MOSFET in a TO262 package.
The UniSiC MOSFET is praised for its low Rdson and gate
charge Qg, an excellent body diode with virtually no stored
charge and a low diode forward voltage drop. This device
can replace conventional MOSFET or IGBT, with standard
gate drives but can be switched over a wide speed range
- as fast as a Superjunction MOSFET, or as slow as an
IGBT. The device is claimed far superior compared to existing
IGBTs, Silicon power MOSFETs or even the best competitive
SiC 1200V MOSFET.
Click on the part number below to download data-sheet:
IXTF1N400
IXTK5N250
IXTX20N150
STW9N150
STP4N150
STFW6N120K3
IXTA2R4N120P
SCH2090KE*
IXTA08N120P
APT31M100B2
STW13NK100Z
FQA8N100C
IRFPG50,
SiHFPG50
FQD2N100TM
IXTY01N100
STW25N95K3
IPW90R120C3
IRFBF30,
SiHFBF30
FQAF11N90C
IPI90R800C3
APT31N80JC3
FQA13N80_F109
SPB17N80C3
IRFPE40,
SiHFPE40
SPA02N80C3
APT43M60L
IXTY5N50P
IRFB812PBF
IRF7799L2TR1PBF
Note: There are chances of errors in specifications,
please cross check with vendor's data sheets.
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